Direct growth of high quality, large area and uniform graphene layers on arbitrary insulating substrates still remains one of a key challenges for the successful integration of graphene into the novel microelectronic devices. Therefore, developments of new approaches for the fabrication of graphene-based nanostructures with high quality graphene and tailored interfaces is of the highest importance.
In the GRAPHICA project, we aimed to develop Si-technology compatible graphene synthesis method and bring the growth method to a new level of technological maturity and demonstrate its suitability for fabrication of graphene-based electronic devices in a 200 mm CMOS pilot line.
During the project the following has been achieved:
- The influence of substrate layouts and catalyst thickness on the proof-of-concept graphene growth has been determined.
- The influence of the wide range of the CVD processing parameters on the properties of grown layers has been investigated.
- The pilot study and the integration of developed layouts into the CMOS platform for the fabrication of the graphene based devices has been demonstrated.
- A technical analysis for the development of next generation CVD equipment at Aixtron for CMOS based graphene application was obtained.
|Call Topic||Integrated Computational Materials Engineering (ICME)|
|Duration in months||36|
|Total project cost||€ 1,515,500|
Im Technologiepark 25, Frankfurt (Oder), GermanyDr. Mindaugas Lukošius
|Link to ERA-LEARN||View on ERA-LEARN website|