Functional 2D materials and heterostructures for hybrid spintronic-memristive devices - 2D-SPIN-MEM

Project summary

Magnetic memories (MRAM) and memristors are amongst the most promising technologies for emerging nonvolatile memories. MRAM implement concepts developed within spintronics, which uses spin –rather than electrons– to transfer and store information. In this project we will explore hybrid spintronic-memristor devices in graphene-based heterostructures comprising 2D transition metal dichalcogenides (TMDs) and less explored group-IV monochalcogenides (IV-MCs) materials. We will perform the first ever evaluation of the potential of 2D IV-MCs as memristors and implement graphene-based heterostructures with enhanced spin-orbit coupling using both TMDs and IV-MCs. With these heterostructures we aim at controlling graphene’s spin properties by changing the memristive setting of the chalcogenides. They will be made and characterized such that new multifunctional 2D systems are generated for applications in ultradense and ultralow power nonvolatile memories and neuromorphic computer architectures.