Engineering of silicon-oxide interface using the pulsed-laser deposition technique - SIOX

Project summary

SIOX aims to exploit the rich functionalities of oxides and their heterostructures, which show great promise within the emerging field of oxide electronics. For their implementation, epitaxial integration of oxides with silicon platforms using industrially appropriate technology is urgently needed, and its development represents the main goal of SIOX. However, such succesfull integration is extremelly delicate due to materials` intrinsic incompatibility. This challange will be addrressed by collaboration between three research groups, with experties in theoretical modelling, atomically-controlled growth and materials` applications. The project has two objectives: to prepare high-quality oxides on silicon by understanding corresponding interface phenomena, and to functionalize as-prepared layers with functional heterostructures. Protocol for successful integration represents the main result of the project, which is heralded as the next step in the development of forthcoming electronics.