Semiconductor nanowire/graphene hybrids for high-efficiency light emitting diodes - NAGRALED

Project summary

The goal of this project is to develop high-efficiency, flexible, light emitting diodes (LEDs) using the epitaxial growth of InGaN nanowire (NW) arrays on graphene. InGaN is being widely used in commercial thin film LEDs, but as a two-dimensional (2D) film form it always requires thick, expensive single-crystalline substrates for high quality epitaxial growth. Due to the higher surface-to-volume ratio of NW structure, it can give higher light emission efficiency and it is also much more cost-efficient. Graphene is a one-atom thick hexagonal carbon crystal with record high electric and thermal conductivity as well as being transparent and very strong and flexible. Our unique concept in this project is to integrate InGaN NWs and graphene together and utilize NW’s and graphene’s innate merits to realize high-efficiency full-color LEDs that can be lightweight and flexible, posing a huge potential in future solid-state lighting and display applications.