Nano-Structured GeSn Coatings for Photonics - GESNAPHOTO

Project summary

The objective of the project is manufacturing of nano-structured GeSn films for optical detection and light emission in the short-wave infrared (SWIR) range (1-3µm). The novelty of the project consist in nano-structuring of layers containing GeSn in order to create GeSn quantum dots (nano-crystals) with control of the size and Sn content, for obtaining high sensitivity. This material is a new group IV advanced coating material based on alloying Ge and Sn elements which extends the IR photonic range of Ge. The most important property is the transition into direct bandgap semiconductor for moderate Sn concentration, of critical importance for photonics of group IV semiconductors. Thus, the project deals with an alternative solution to the present III-V IR technology, a solution which is less expensive, environmentally friendly and compatible with Si technology. The IR detection has many practical applications as for example night vision, medical applications, automotive, aviation, etc.