Graphene for Integrated Circuit Applications - GRAPHICA

Project summary

Development of new approaches for the fabrication of graphene-based nanostructures with high quality graphene and tailored interfaces is of the highest importance. In this proposal, the main objective is to develop Si-technology compatible and transfer-free graphene synthesis method. This project aims to bring the Ni-assisted growth method to a new level of technological maturity and demonstrate its suitability for fabrication of graphene-based electronic devices in a state-of-the-art 200 mm CMOS pilot line. Towards this goal, we will investigate the interdependencies between gas phase chemistry, graphene formation and reactions with the insulator surface, as well as the full spectrum of technology integration-related aspects. In addition, the optimization of the CVD graphene growth method on semi-insulating SiC will be carried out. Finally, the transfer methods for CVD graphene will be scaled up to 200 mm wafers to show their potential with standard microelectronic manufacturing.